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  MDD312-14N1 phase leg standard rectifier module 2 1 3 part number MDD312-14N1 backside: isolated fav f v v 1.03 rrm 310 1400 = v = v i = a 2x features / advantages: applications: package: package with dcb ceramic improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current diode for main rectification for single and three phase bridge configurations supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors y1 industry standard outline rohs compliant base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20170116i data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDD312-14N1 v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.13 r 0.12 k/w r min. 310 v rsm v 500 t = 25c vj t = c vj ma 30 v = v r t = 25c vj i = a f v t = c c 100 p tot 1040 w t = 25c c r k/w 300 1400 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.33 t = 25c vj 150 v f0 v 0.80 t = c vj 150 r f 0.6 m ? v 1.03 t = c vj i = a f v 300 1.29 i = a f 600 i = a f 600 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1400 max. repetitive reverse blocking voltage t = 25c vj i a 520 c j 381 junction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 10.8 11.7 421.4 409.0 ka ka ka ka 9.18 9.92 583.2 566.1 1400 rms forward current f(rms) fav d = 180 sine 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1500 0.04 ixys reserves the right to change limits, condition s and dimensions. 20170116i data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDD312-14N1 ratings part number yywwaa date code (dc) production index (pi) lot.no: xxxxxx data matrix: part no. (1-19), dc + pi (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) circuit mdd312-16n1 y1-cu 1600 package t op c m d nm 7 mounting torque 4.5 t vj c 150 virtual junction temperature -40 weight g 680 symbol definition typ. max. min. conditions operation temperature unit m t nm 13 terminal torque 11 v v t = 1 second v t = 1 minute isolation voltage mm mm 16.0 16.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 600 a per terminal 125 -40 terminal to terminal mdd312-18n1 mdd312-20n1 y1-cu y1-cu 1800 2000 mdd312-22n1 y1-cu 2200 y1 similar part package voltage class mdd312-12n1 y1-cu 1200 delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MDD312-14N1 463434 box 3 MDD312-14N1 standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.8 m ? v 0 max r 0 max slope resistance * 0.4 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20170116i data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDD312-14N1 optional accessories for modules keyed gate/cathode twin plugs with wire length = 35 0 mm, gate = white, cathode = red type zy 180l (l = left for pin pair 4/5) type zy 180r (r = right for pin pair 6/7) 2.8 x 0.8 10 2 49 45 43 1 2 3 7 6 5 4 80 92 115 6.2 20 22.5 35 28.5 50 38 18 ul 758, style 3751 52 +0 -1,4 32 +0 -1,9 15 1 3x m8 2 1 3 outlines y1 ixys reserves the right to change limits, condition s and dimensions. 20170116i data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDD312-14N1 0 25 50 75 100 125 150 0 100 200 300 400 500 0 100 200 300 400 500 600 0 25 50 75 100 125 150 01 1 10 5 1 0 6 0.01 0.1 1 2000 4000 6000 8000 1 0000 0 100 200 300 400 500 600 0 250 500 750 1000 1250 1500 1750 t [s] 0 25 50 75 100 125 150 0 100 200 300 400 500 i fsm [a] r l 80 % v rrm t vj = 45c t vj = 150c 50 hz t vj = 150c v r = 0 v t vj = 45c 180 sin 120 60 30 dc 0.6 0.8 0.1 0.2 0.3 0.4 r thka k/w 0.06 2 x mdd312 circuit b2u 0.12 0.06 0.04 r thka k/w 0.5 0.08 0.2 0.3 50 150 0 100 200 100 300 500 0 200 400 600 50 150 0 100 200 0 5 10 15 20 25 t [ms] i 2 t [a 2 s] t c [c] i favm [a] i favm [a] t a [c] p tot [ w] i rm [a] di f /dt [a/s] p tot [ w] i davm [a] t a [c] t rr [s] di f /dt [a/s] 180 sin 120 60 30 dc fig. 1 surge overload current i fsm : crest value, t: duration fig. 2 i 2 t versus time (1-10 ms) fig. 3 maximum forward current at case temperature fig. 4 power dissipation vs. forward current & ambient tem perature (per diode) fig. 5 typ. peak reverse current fig. 6 single phase rectifier bridge: power dissipation vs. direct output current and ambient temperature r = resistive load, l = inductive load fig. 7 typ. recovery time t rr versus -di f /dt i f = 400 a i f = 400 a t vj = 125c v r = 600 v t vj = 125c v r = 600 v rectifier ixys reserves the right to change limits, condition s and dimensions. 20170116i data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDD312-14N1 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 0.25 z thjc [k/w] 0 25 50 75 100 125 150 0 200 400 600 800 0 500 1000 1500 2000 2500 3 0 0 0 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 3 x m dd 312 circuit b6u 0.3 0.2 0.15 0.1 0.06 0.03 0.4 r thka k/w dc 180 120 60 30 dc 30 60 120 180 i favm [a] t a [c] p tot [w] fig. 8 three phase rectifier bridge: power dissipation vs. d irect output current & ambient temperature t [s] t [s] z thjk [ k/w] fig. 9 transient thermal impedance junction to case (per di ode) f i g . 1 0 t r an s i en t t h e r m a l i m pe d an c e j u n c t i o n t o h e a t s i n k ( p e r d i o d e ) constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.0058 0.00054 2 0.0310 0.09800 3 0.0720 0.54000 4 0.0112 12.0000 constants for z thjk calculation: i r thi (k/w) t i (s) 1 0.0058 0.00054 2 0.0310 0.09800 3 0.0720 0.54000 4 0.0112 12.0000 5 0.0400 12.0000 r thjc [k/w] 0.120 0.128 0.135 0.153 0.185 d dc 180 120 60 30 r thjc for various conduction angles d : r thjk [k/w] 0.160 0.168 0.175 0.193 0.225 d dc 180 120 60 30 r thjk for various conduction angles d : rectifier ixys reserves the right to change limits, condition s and dimensions. 20170116i data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved


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